Diode effect in magnetic tunnel junctions with impurities
نویسندگان
چکیده
منابع مشابه
Magnetic Tunnel Junctions
Application of Bardeen’s tunneling theory to magnetic tunnel junctions having a general degree of atomic disorder reveals the close relationship between magneto-conduction and voltage-driven pseudo-torque, as well as the thickness dependence of tunnel-polarization factors. Among the results: 1) The torque generally varies as sin θ at constant applied voltage. 2) Whenever polarization factors ar...
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Using the closed-time path-integral approach, we nonperturbatively study inelastic tunneling of electrons via magnetic impurities in the barrier accompanied by phonon emission in a magnetic tunnel junction. The spectrum density of phonon emission is found to show a power-law infrared singularity ,v−s1−gd with g the dimensionless electron-phonon coupling. As a consequence, the tunneling conducta...
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When magnetic tunnel junctions (MTJ) are built into a memory device they will be arranged in a matrix; therefore some of the not addressed elements will be exposed to a significant field during the switching of one element. It has to be avoided that the state of not selected MTJ is changed during this process. Here we present data on the stability of MTJ against small fields which occur during ...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2005
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.1997294