Dielectronic recombination rate in statistical model

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On Dielectronic Recombination

The derivation of a general formula for the coefficient of dielectric recombination is reviewed, and approximate formulae known in the literature are discussed. With the aid of Burgess' simplified formula calculations of the coefficient of dielectronic recombination for the elements C, 0 , Ne, M g , Si, S and Fe in the temperature range 108 — 4 x 106 ° K are performed. The results are presented...

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ژورنال

عنوان ژورنال: EPJ Web of Conferences

سال: 2016

ISSN: 2100-014X

DOI: 10.1051/epjconf/201713203028