منابع مشابه
Dielectric properties in heteroepitaxial Ba0.6Sr0.4TiO3 thin films: Effect of internal stresses and dislocation-type defects
A series of heteroepitaxial Ba0.6Sr0.4TiO3 were grown on 0.29(LaAlO3):0.35(Sr2TaAlO6) substrates using pulsed-laser deposition. X-ray characterization revealed compressive in-plane stresses in the thinnest films, which were relaxed in a continuous fashion with increasing thickness. A theoretical treatment of the misfit strain was in good agreement with the measured out-of-plane lattice paramete...
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We subjected III–V InGaAs MOSFETs to positive and negative gate stresses. The stress polarity strongly affects the degradation kinetics of the gate current. Positive stress features a remarkable increase of the gate current, a net negative trapped charge, a large telegraphic noise, and soft breakdown, before the occurrence of the final catastrophic breakdown. Negative stress features only posit...
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The effects of a current-limited breakdown (BD) on the post-BD current of MOS capacitors with a thin high-k dielectric stack have been analysed. A strong current reduction after BD and, consequently, a partial recovery of the insulating properties of the dielectric stack is observed. The similarities with the Resistive Switching phenomenon observed in MIM structures for memory applications are ...
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Recently, photonic crystals doped with liquid crystal (LC) material havegained much research interest. In this article new ternary one-dimensional photoniccrystal introduced and studied. The liquid crystal layer of 5CB and 5PCH is sandwichedby two dielectric layers. For the first time, we use four structures SiO2/UCF35/CaF2,SiO2/5CB/CaF2, NFK51/UCF35/NPSK53 and NFK51/5CB/NPSK53. The effect ofte...
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ژورنال
عنوان ژورنال: Journal of the Franklin Institute
سال: 1911
ISSN: 0016-0032
DOI: 10.1016/s0016-0032(11)90541-9