Dielectric Front Passivation for Cu(In,Ga)Se ₂ Solar Cells: Status and Prospect

Cu(In,Ga)Se2 (CIGSe) solar cells are among the most efficient thin-film on lab scale. However, this technology has relatively large upscaling losses for commercial technology. To tackle this, paradigm shifts proposed that allow simpler, cost-effective, and CIGSe cells. Front passivation using dielectric layers is one of options being investigated as widely used in Si Research front an early stage no improvements made yet. A close comparison with silicon to understand why it seems be more difficult In general, chemical less effective, resulting higher interface defect densities than seen Si. Also, field-effect requires positive charges, which have not been implemented yet surface. Finally, passivation, often a high-temperature annealing step applied, possible CIGSe. It apply tunneling layer fixed charges combination electron transport move forward. list potential could suitable provided.