Dielectric Dependent Absorption Characteristics in CNFET Infrared Phototransistor

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Heterojunction phototransistor for highly sensitive infrared detection

In this work, we have proposed a model for the ultimate physical limit on the sensitivity of the heterojunction bipolar phototransistors (HPTs). Based on our modeling we have extracted the design criteria for the HPT for high sensitivity application. HPT with the submicron emitter and base area has the potential to be used for the low number photon resolving in near-infrared (NIR) wavelength. H...

متن کامل

Dielectric Characteristics and Microwave Absorption of Graphene Composite Materials

Nowadays, many types of materials are elaborated for microwave absorption applications. Carbon-based nanoparticles belong to these types of materials. Among these, graphene presents some distinctive features for electromagnetic radiation absorption and thus microwave isolation applications. In this paper, the dielectric characteristics and microwave absorption properties of epoxy resin loaded w...

متن کامل

Infrared phototransistor using capacitively coupled two-dimensional electron gas layers

A narrow-band infrared phototransistor s14.8 mmd is designed and realized based on a GaAs/AlGaAs double-layer structure. An isolated island formed from the first quantum well sQWd works as a gate, which is capacitively coupled to the remote two-dimensional electron gas s2DEGd layer working as the source/drain channel. Incident radiation excites the intersubband transition within the isolated QW...

متن کامل

Simulation on a Charge Sensitive Infrared Phototransistor for 45μm Wavelength

Charge sensitive infrared phototransistors (CSIP) are well known for their capability for response spectrum tuning and single photon detection. In this paper, we established a physical model for a charge sensitive infrared phototransistor operating at 45μm wavelength using the Crosslight Apsys software. Several key physical mechanisms involved such as inter-subband optical transition and resona...

متن کامل

Study on Infrared Absorption Characteristics of Ti and TiNx Nanofilms

Infrared detector has a wide range of applications. To fabricate an IR detector with good sensitivity, an efficient IR absorber is needed. In this paper, we theoretically and experimentally investigated the absorption characteristics of Ti, multi-layer structured Ti-SiO2 and TiNx-SiNx nano films. The multi-layer structured TiNx-SiNx films with different nitrogen contents and Ti nano films with ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: International Journal of Engineering and Technologies

سال: 2020

ISSN: 2297-623X

DOI: 10.18052/www.scipress.com/ijet.19.11