Diamond Nanowire Transistor with High Current Capability

نویسندگان

چکیده

Carrier confinement in nanowire (NW) structures can offer a host of new material properties compared to bulk electronic devices. Diamond be considered an ultimate semiconductor given its superlative electronic, physical, and optical properties. However, the development diamond device technology has been hindered by doping problems conventional structures. Here, heavily doped NWs, some 15 nm wide only 1–2 deep overcome these issues significant advance NW technology; transistor action induced with remote side gates alone, without need for junctions. Quasi-ballistic transport is most-likely responsible extraordinary current handling capability transistors fabricated here at 20 MA cm−2, being around 0.04 G0. This unipolar opens up paradigm nanoelectronic technology.

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ژورنال

عنوان ژورنال: Physica Status Solidi A-applications and Materials Science

سال: 2022

ISSN: ['1862-6300', '1862-6319']

DOI: https://doi.org/10.1002/pssa.202100622