Development of type-II superlattice long wavelength infrared focal plane arrays for land imaging

Radiometric characterization of type-II InAs/GaSb superlattice (t2sl) midwave infrared photodetectors and focal plane arrays

Preamplifier and AD converter system for infrared focal plane arrays

We describe a precision preamplifier and analog-to-digital ~AD! converter system for use with infrared focal plane arrays. The system uses a correlated double sampling integrated circuit which performs an analog subtraction of each full pixel level from its respective reset level prior to digitization by a 14-bit AD converter; this process is also known as ‘‘delta-reset’’ sampling. The system w...

Growth and fabrication of InAs/GaSb type II superlattice mid-wavelength infrared photodetectors

We report our recent work on the growth and fabrication of InAs/GaSb type II superlattice photodiode detectors. The superlattice consists of 9 monolayer InAs/12 monolayer GaSb in each period. Lattice mismatch between the GaSb substrate and the superlattice is 1.5 × 10-4. The full width at half maximum of the first-order satellite peak from X-ray diffraction is 28 arc sec. The P-I-N photodiodes ...

Significantly improved minority carrier lifetime observed in a long- wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb

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2048x2048 VISIBLE/INFRARED HgCdTe FOCAL PLANE ARRAYS (FPAs)

Rockwell has developed the world’s largest multiplexer for use with infrared HgCdTe and visible silicon detector arrays. The resulting FPAs are to be proposed for the Next Generation Space Telescope (NGST) program, ground-based astronomy, and other low background applications. The 2048x2048 multiplexer’s unit cell size is 18 μm x 18 μm with source follower per detector input (SFD) and 4 and 32 ...