Development of Crystal Growth Technique of Silicon by the Czochralski Method
نویسندگان
چکیده
منابع مشابه
Development of Crystal Growth Technique of Silicon by the Czochralski Method
We report on the Czochralski method for single silicon crystal growth and discuss heat and mass transfer and defect formation in the crystal. A re ector was used for separation of the heating and cooling areas in the furnace enabling us to speed up crystal growth. The melt ow to stabilize the temperature distribution in a crucible was controlled using transverse magnetic elds in a large-scale s...
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Modeling of heat transfer is presented for the entire Czochralski Si-growth furnace. The axisymmetric steady-state approach with moving computational grids is used. Melt turbulent flow, inert gas flow, heat transfer in solid parts, and radiative heat transfer in the system are considered. The Reynolds-averaged Navier-Stokes equations written with the Boussinesq approximation and the energy equa...
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Single crystal silicon has played the fundamental role in electronic industry since the second half of the 20th century and still remains the most widely used material. Electronic devices and integrated circuits are fabricated on single-crystal silicon wafers which are produced from silicon crystals grown primarily by the Czochralski (CZ) technique. Various defects are formed in the growing cry...
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ژورنال
عنوان ژورنال: Acta Physica Polonica A
سال: 2013
ISSN: 0587-4246,1898-794X
DOI: 10.12693/aphyspola.124.227