Design of a 0.8-2.2GHz Ultra-Wideband RF High Power Amplifier

Based on the self-developed standard process RF-LDMOS device, a new ultra-wideband RF power amplifier is designed in this letter. The removes absorbing resistor and capacitor series structure at end of drain. stability circuit enhanced by pre-matching circuit. Considering small impedance value high-power it difficult to achieve broadband matching. novel tapering drain transmission has been developed which overcomes distributed amplifier’s limitations low efficiency. Ultra-wideband excellent output measurement results show that from 0.8-2.2GHz, under condition 28V supply, saturated 43dBm (20W), gain 10dB, efficiency about 30%-50%; peak-to-average ratio 8dB, ACPR less than -41dBc when linear 5W, proving effectiveness tapered broadband.