Design and Stability analysis of CNTFET based SRAM cell
نویسندگان
چکیده
منابع مشابه
Design and Analysis of 5-T SRAM Cell in 32nm CMOS and CNTFET Technologies
MOS transistor play a vital role in today VLSI technology. In CMOS based design, symmetry should be followed in circuit operation. Most of the complex circuits are allowed to design in CMOS, however, there are several drawbacks present in this complementary based design. CMOS has lost its credentiality during scaling beyond 32nm. Scaling down causes severe short channel effects which are diffic...
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As silicon semiconductor device feature size scales down to the nanometer range, planar bulk CMOS design and fabrication encounter significant challenges nowadays. Carbon Nanotube Field Effect Transistor (CNTFET) has been introduced for high stability, high performance and low power SRAM cell design as an alternative material. Technology scaling demands a decrease in both VDD and VT to sustain ...
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While designing supporting and peripheral circuits like address decoders, sensing circuits, sensing amplifiers, pre charge and I/O control circuits are very important for the proper functioning of SRAM. BL and BL are the two access lines present in the SRAM memory cell which is accessed by the supporting circuits. Designing memory cell with low power consumption and high noise margin without co...
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ژورنال
عنوان ژورنال: IOP Conference Series: Materials Science and Engineering
سال: 2021
ISSN: 1757-899X
DOI: 10.1088/1757-899x/1033/1/012043