Design and Self-Consistent Schrodinger-Poisson Model Simulation of Ultra-Thin Si-Channel Nanowire FET

Photoconductivity, pH Sensitivity, Noise, and Channel Length Effects in Si Nanowire FET Sensors

Silicon nanowire (NW) field-effect transistor (FET) sensors of various lengths were fabricated. Transport properties of Si NW FET sensors were investigated involving noise spectroscopy and current-voltage (I-V) characterization. The static I-V dependencies demonstrate the high quality of fabricated silicon FETs without leakage current. Transport and noise properties of NW FET structures were in...

Self-Consistent Solution of the Schrodinger and Poisson Equations Applied to Quantum Well Heterostructures

A novel numerical approach to solving Schr odinger's equation as applied to quantum well heterostructures is described. The quantum mechanical energy subbands, wave functions and charge density are calculated based on a two-directional fourthorder Runge-Kutta (RK4) algorithm. The algorithm is applied to well-de ned quantum well structures. Results are compared with analytic solutions to ensure...

Self-consistent electrothermal Monte Carlo simulation of single InAs nanowire channel metal-insulator field-effect transistors

Electron transport and self-heating effects are investigated in metal-insulator field-effect transistors with a single InAs nanowire channel, using a three-dimensional electrothermal Monte Carlo simulator based on finite-element meshing. The model, coupling an ensemble Monte Carlo simulation with the solution of the heat diffusion equation, is carefully calibrated with data from experimental wo...

A study of transconductance degradation in HEMT using a self-consistent Boltzmann-Poisson-Schrodinger solver

Semiconductor Device Simulation by a New Method of Solving Poisson, Laplace and Schrodinger Equations (RESEARCH NOTE)

In this paper, we have extended and completed our previous work, that was introducing a new method for finite differentiation. We show the applicability of the method for solving a wide variety of equations such as Poisson, Lap lace and Schrodinger. These equations are fundamental to the most semiconductor device simulators. In a section, we solve the Shordinger equation by this method in sever...