Depth Profiling of Defects in He Implanted SiO2

Cathodoluminescence depth profiling of ion-implanted GaN

Depth distribution of luminescent Si nanocrystals in Si implanted SiO2 films on Si

Depth-resolved measurements of the photoluminescence of Si implanted and annealed SiO2 films on Si have been performed to determine the depth distribution of luminescent Si nanocrystals. Si nanocrystals with diameters ranging from ;2 to 5 nm were formed by implantation of 35 keV Si ions into a 110-nm-thick thermally grown SiO2 film on Si~100! at a fluence of 6310 16 Si/cm, followed by a thermal...

The oxidation of calcium implanted titanium in water: A depth profiling study

Ion implantation of calcium has been proposed previously as a route to bioactive titanium surfaces and has been shown to stimulate promising cell and tissue responses. While the precise reasons for this behaviour remain poorly understood, it is clear that the nature of the Ca implanted surface changes rapidly on exposure to body fluids. In order to understand the processes taking place more cle...

Defect-related infrared photoluminescence in Ge-implanted SiO2 films

SiO2 films with Ge 1 implantation at an energy of 60 keV and a dose of 1310 cm, followed by annealing at different temperature, exhibit a broad infrared photoluminescence ~PL! at room temperature under an excitation of the 514.5 nm line of Ar laser. With increasing the annealing temperature, the intensity of the infrared PL band decreases, its full width at half maximum increases, and its energ...

Time-resolved photoluminescence of implanted SiO2:Si+ films

0022-3093/$ see front matter 2009 Elsevier B.V. A doi:10.1016/j.jnoncrysol.2009.01.048 * Corresponding author. Tel.: +7 9086312122. E-mail addresses: [email protected], fmpk_john@ In this paper we present results of a low-temperature time-resolved photoluminescence (PL) investigation of thin SiO2 films implanted with silicon ions. In addition to the luminescence of well-known ODCs, some other ...