Deposition of hard magnetic SmCo5thin films by magnetron sputtering

DEPOSITION OF THIN TiO2 FILMS BY DC MAGNETRON SPUTTERING METHOD

Sputter deposition process is another old technique being used in modern semiconductor industries. Sputtering is a process that can deposit TiO2 material on wafer/glass substrates. In this process target is connected to negative high voltage. Further argon gas is introduced into the chamber and is ionized to a positive charge. The positively charged argon atoms are attracted and strike the nega...

Deposition of TiN/CrN hard superlattices by reactive d.c. magnetron sputtering

Multilayer superlattice coatings of TiN/CrN were deposited on silicon substrates using a reactive d.c. magnetron sputtering process. Superlattice period, also known as modulation wavelength (A), was controlled by controlling the dwell time of the substrate underneath Ti and Cr targets. X-ray diffraction (XRD), nanoindentation and atomic force microscopy (AFM) were used to characterize the fdms....

CrNx Films Prepared by DC Magnetron Sputtering and High-Power Pulsed Magnetron Sputtering: A Comparative Study

CrNx (0 ≤ x ≤ 0.91) films synthesized using highpower pulsed magnetron sputtering, also known as high-power impulse magnetron sputtering (HiPIMS), have been compared with those made by conventional direct-current (dc) magnetron sputtering (DCMS) operated at the same average power. The HiPIMS deposition rate relative to the DCMS rate was found to decrease linearly with increasing emission streng...

Deposition of Visible Light Active Photocatalytic Bismuth Molybdate Thin Films by Reactive Magnetron Sputtering

Bismuth molybdate thin films were deposited by reactive magnetron co-sputtering from two metallic targets in an argon/oxygen atmosphere, reportedly for the first time. Energy dispersive X-ray spectroscopy (EDX) analysis showed that the ratio of bismuth to molybdenum in the coatings can be effectively controlled by varying the power applied to each target. Deposited coatings were annealed in air...

Deposition by radio frequency magnetron sputtering of GaV4S8 thin films for resistive random access memory application