Dependence of persistent photoconductivity on the thickness of β-Ga2O3 thin film photodetectors on <i>c</i>-plane sapphire via magnetron sputtering

β-Ga2O3 is a next-generation, ultra-wide bandgap semiconductor with intrinsic solar-blindness having the potential to replace Si for photodetection applications especially UV-C range. The material itself shows excellent photoconductive gain but quite prone menace of persistent photoconductivity, or PPC. fabricated devices become slower because PPC and it also leads reliability issues logic. Herein, we report dependence effect on different thickness thin film based solar-blind photodetectors. polycrystalline films are grown c-plane sapphire via RF magnetron sputtering at an elevated temperature 500 °C. Optical decreases increasing while their grain size increases. oxygen-related defects studied using x-ray photoelectron spectroscopy responsible observation enhanced thinner films. device performance intimately connected quality film, its stoichiometry amount oxygen present in system. Better lower vacancies show improved least This work that play important role determining ultimate need be engineered high