Dependence of Electrical Characteristics of Junctionless FET on Body Material
نویسندگان
چکیده
منابع مشابه
Representation of a nanoscale heterostructure dual material gate JL-FET with NDR characteristics
In this paper, we propose a new heterostructure dual material gate junctionless field-effect transistor (H-DMG-JLFET), with negative differential resistance (NDR) characteristic. The drain and channel material are silicon and source material is germanium. The gate electrode near the source is larger. A dual gate material technique is used to achieve upward band bending in order to access n-i-p-...
متن کاملfabrication of new ion sensitive field effect transistors (isfet) based on modification of junction-fet for analysis of hydronium, potassium and hydrazinium ions
a novel and ultra low cost isfet electrode and measurement system was designed for isfet application and detection of hydronium, hydrazinium and potassium ions. also, a measuring setup containing appropriate circuits, suitable analyzer (advantech board), de noise reduction elements, cooling system and pc was used for controlling the isfet electrode and various characteristic measurements. the t...
effect of oral presentation on development of l2 learners grammar
this experimental study has been conducted to test the effect of oral presentation on the development of l2 learners grammar. but this oral presentation is not merely a deductive instruction of grammatical points, in this presentation two hypotheses of krashen (input and low filter hypotheses), stevicks viewpoints on grammar explanation and correction and widdowsons opinion on limited use of l1...
15 صفحه اولthe effect of explicit teaching of metacognitive vocabulary learning strategies on recall and retention of idioms
چکیده ندارد.
15 صفحه اولA Physics–based Model for Electrical Parameters of Double gate Hetero-material Nano Scale Tunnel FET
This paper focuses a hetero gate material dielectric DG TFET with low band gap source material, which offers high / on off I I ratio, sub 60mV/dec subthreshold swing along with significant improvement in on current. Here analytical model for 2D electric field is derived from Poisson’s equation and is used to determine the subthreshold swing, transconductance, output conductance, gate threshold ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Procedia Computer Science
سال: 2020
ISSN: 1877-0509
DOI: 10.1016/j.procs.2020.04.112