Dependence of defect structure on In concentration in InGaN epilayers grown on AlN/Si(111) substrate
نویسندگان
چکیده
InGaN epilayers with different indium concentrations have been grown on 100-nm-thick AlN/n-Si(111) template using plasma assisted molecular beam epitaxy.
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ژورنال
عنوان ژورنال: Materials advances
سال: 2022
ISSN: ['2633-5409']
DOI: https://doi.org/10.1039/d2ma00438k