Demonstration of an amorphous carbon tunnel diode
نویسندگان
چکیده
منابع مشابه
Demonstration of an amorphous carbon tunnel diode
Negative differential conductance in metal/amorphous nitrogenated carbon a-CNx /Si structures is demonstrated at room temperature. These metal-insulator-semiconductor tunnel diodes are fabricated by optimizing the tunnel barrier at the a-CNx /Si junction through the control of the band gap and nitrogen doping level in carbon where this a-C layer acts as a semi-insulator. A small electron tunnel...
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An analysis of tnmel-diode low-level detection is presented for the purpose of explaining some of the unusual detection characteristics that occur under certain hias conditions. For example, in the vicinity of its inflection hias point, a tmmel diode exhibits a discriminator-like rectification behavior with two sensitivity peaks. When biased at one of these peaks, the diode is capable of unusua...
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We have demonstrated an 18.9 nm Ni-like molybdenum soft x-ray laser, pumped by a compact all-diode-pumped Yb:YAG laser. The solid-state pump laser produces 8.5 ps pulses with up to 1 J energy at 10 Hz repetition rate. This diode-pumped laser has the potential to greatly increase the repetition rate and the average power of soft x-ray lasers on a significantly smaller footprint.
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The magnetisation and electron spin resonance (ESR) spectrum of two specimens of tetrahedral amorphous carbon (ta-C), deposited from a filtered cathodic arc, were measured over a wide temperature range. The magnetisation was found to consist of superparamagnetic, paramagnetic and diamagnetic contributions. The superparamagnetic contribution resembled that recently found in carbon prepared from ...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2007
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.2454512