Degradation Studies of Air-Exposed Black Phosphorous and Black Arsenic Phosphorous

نویسندگان

چکیده

This work investigates the effects of oxygen and humidity on black phosphorous (BP) arsenic (AsxP1−x ) flakes using Raman spectroscopy in situ electric transport measurements (four-probe resistance thermoelectric power, TEP). The results show that incorporation into lattice BP renders it more stable, with degradation times for BP, As0.2P0.8, As0.4P0.6 being 4, 5, 11 days, respectively. P-P peak intensities were determined to decrease exposure moisture. TEP confirmed both AsxP1−x are p-type semiconductors stabilizing slowly than BP. In addition, four-probe stabilized significantly faster when exposed air after degassed a vacuum. was attributed charge transfer between redox potential Fermi energy (EF) semiconductors.

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ژورنال

عنوان ژورنال: ChemEngineering

سال: 2023

ISSN: ['2305-7084']

DOI: https://doi.org/10.3390/chemengineering7020018