Defect- and H-Free Stoichiometric Silicon Carbide by Thermal CVD from the Single Source Precursor Trisilacyclohexane
نویسندگان
چکیده
Stoichiometric silicon carbide (SiC) thin films were grown using thermal chemical vapor deposition (TCVD) from the single source precursor 1,3,5-trisilacyclohexane (TSCH) on c-Si (100) substrates within an optimized substrate temperature window ranging 650 to 850 °C. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) analyses revealed that as-deposited consisted of a Si-C matrix with Si:C ratio ~1:1. FTIR photoluminescence (PL) spectrometry studies showed deposited ≥ 750 °C defect- H-free detection limit techniques used, while ellipsometry measurements yielded as-grown SiC average refractive index ~2.7, consistent reference value for 3C-SiC phase. The exceptional quality appears sufficient overcome limitations associated structural defects failure in high voltage, electronics 2-D film growth. TSCH, liquid at room good stability during transport handling as well pressure (~10 torr 25 °C), provides viable growth stoichiometric without need post-deposition treatment.
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ژورنال
عنوان ژورنال: Electronic materials
سال: 2022
ISSN: ['2673-3978']
DOI: https://doi.org/10.3390/electronicmat3010003