Deep tuning of photo-thermoelectricity in topological surface states
نویسندگان
چکیده
منابع مشابه
Surface States of Topological Insulators
We introduce a topological boundary condition to study the surface states of topological insulators within a long-wavelength four-band model. We find that the Dirac point energy, the band curvature, and the spin texture of surface states are crystal-face dependent. For an arbitrary termination of a bulk crystal, the energy of the symmetry protected Dirac point is determined by the bulk physics ...
متن کاملTuning the vertical location of helical surface states in topological insulator heterostructures via dual-proximity effects
In integrating topological insulators (TIs) with conventional materials, one crucial issue is how the topological surface states (TSS) will behave in such heterostructures. We use first-principles approaches to establish accurate tunability of the vertical location of the TSS via intriguing dual-proximity effects. By depositing a conventional insulator (CI) overlayer onto a TI substrate (Bi₂Se ...
متن کاملTopological surface states scattering in antimony
In this work we study the topologically protected states of the Sb(111) surface by using ab initio transport theory. In the presence of a strong surface perturbation we obtain standing-wave states resulting from the superposition of spin-polarized surface states. By Fourier analysis, we identify the underlying two dimensional scattering processes and the spin texture. We find evidence of resona...
متن کاملTopological surface states in nodal superconductors.
Topological superconductors have become a subject of intense research due to their potential use for technical applications in device fabrication and quantum information. Besides fully gapped superconductors, unconventional superconductors with point or line nodes in their order parameter can also exhibit nontrivial topological characteristics. This article reviews recent progress in the theore...
متن کاملSurface States Transport in Topological Insulator Nanowires
We investigate the transport properties of topological insulator (TI) Bi0.83Sb0.17 nanowires. Single-crystal nanowire samples with diameters ranging from 75 nm to 1.1 μm are prepared using high frequency liquid phase casting in a glass capillary; cylindrical single crystals with (101̄1) orientation along the wire axis are produced. Bi0.83Sb0.17 is a narrow-gap semiconductor with an energy gap at...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Scientific Reports
سال: 2020
ISSN: 2045-2322
DOI: 10.1038/s41598-020-73950-z