Deep-level traps in lightly Si-doped n-GaN on free-standing m-oriented GaN substrates
نویسندگان
چکیده
منابع مشابه
Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates
Photoluminescence (PL) properties are reported for a set of m-plane GaN films with Mg doping varied from mid 10 18 cm -3 to well above 10 19 cm -3 . The samples were grown with MOCVD at reduced pressure on low defect density m-plane bulk GaN templates. The sharp line near bandgap bound exciton (BE) spectra observed below 50 K, as well as the broader donor-acceptor pair (DAP) PL bands at 2.9 eV ...
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ژورنال
عنوان ژورنال: AIP Advances
سال: 2018
ISSN: 2158-3226
DOI: 10.1063/1.5011362