Deep-level trap formation in Si-substituted Sr2SnO4:Sm3+ for rewritable optical information storage

نویسندگان

چکیده

Persistent luminescent materials containing deep-level traps have attracted extensive research interest in the field of optical information storage due to their unique features long-lasting emission, energy storage, and controllable photon release upon external stimulations. However, lack suitable with is still bottleneck such an application. Herein, we report a series persistent reddish-orange emissions thermal stimulation. Through substitution Sn by Si, more deeper trap levels are achieved Sr2SnO4:Sm3+,Si4+ phosphors. Moreover, both ultraviolet light high-energy X-ray irradiations can induce emitting luminescence from as-synthesized samples. Rewritable readout based on trapping de-trapping processes demonstrated. Optical be handily encoded using commercially available 365 nm light-emitting diode, decoded The phosphors as presented this work show great promise for rewritable data encryption.

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ژورنال

عنوان ژورنال: Materials Today Chemistry

سال: 2022

ISSN: ['2468-5194']

DOI: https://doi.org/10.1016/j.mtchem.2022.100906