DC characteristics of gate-all-around (GAA) silicon-on-insulator MOSFETs at cryogenic temperatures

On Channel Shape Variation of 10-nm-Gate Gate-All-Around Silicon Nanowire MOSFETs

Recently, gate-all-around (GAA) nanowire field effect transistors (NWFETs) have attracted increasing attention due to their superior gate control and short channel effect immunity [1-4]. However, confined by the limitation of manufacturing process, the different aspect ratio (AR) results in different shapes of channel cross section, such as ellipse-shaped or rectangular-shaped instead of the id...

Wire width dependence of hot carrier degradation in silicon nanowire gate-all-around MOSFETs

Gate-All-Around Silicon Nanowire MOSFETs: Top-down Fabrication and Transport Enhancement Techniques

Scaling MOSFETs beyond 15 nm gate lengths is extremely challenging using a planar device architecture due to the stringent criteria required for the transistor switching. The top-down fabricated, gate-all-around architecture with a Si nanowire channel is a promising candidate for future technology generations. The gate-all-around geometry enhances the electrostatic control and hence gate length...

3D Quantum Numerical Simulation of Horizontal Rectangular Dual Metal Gate\Gate All Around MOSFETs

The integrity and issues related performance associated with scaling Si MOSFET channel length promotes research in new device SOI, double gate and GAA MOSFET. In this paper, we pr novel characteristic of horizontal rectangular gate MOSFETs with dual metal of gate we obtained using SILVACO TCAD tools. We will also exhibit some simulation results we obtained relating to the influence of some para...

Impact of Elliptical Cross-Section on Some Electrical Properties of Gate-All-Around MOSFETs

-Silicon (Si) Gate-All-Around (GAA) MOSFETs offers full electrostatic control over the gate which makes them promising candidates for the next generation complimentary metal-oxide-semiconductor field-effect transistors (CMOS) devices. Due to variations in the growth condition, the cross-section of GAA MOSFETs is often elliptical instead of being perfectly circular. This elliptical cross section...