CZTS absorber layer for thin film solar cells from electrodeposited metallic stacked precursors (Zn/Cu-Sn)

Improving the optical properties of thin film plasmonic solar cells of InP absorber layer using nanowires

In this paper, a thin-film InP-based solar cell designed and simulated. The proposed InP solar cell has a periodic array of plasmonic back-reflector, which consists of a silver layer and two silver nanowires. The indium tin oxide (ITO) layer also utilized as an anti-reflection coating (ARC) layer on top. The design creates a light-trapping structure by using a plasmonic back-reflector and an an...

AlSb Compound Semiconductor as Absorber Layer in Thin Film Solar Cells

Modified Back Contact Interface of CZTSe Thin Film Solar Cells: Elimination of Double Layer Distribution in Absorber Layer

Double layer distribution exists in Cu2SnZnSe4 (CZTSe) thin films prepared by selenizing the metallic precursors, which will degrade the back contact of Mo substrate to absorber layer and thus suppressing the performance of solar cell. In this work, the double-layer distribution of CZTSe film is eliminated entirely and the formation of MoSe2 interfacial layer is inhibited successfully. CZTSe fi...

Atomic layer deposition (ALD): from precursors to thin film structures

The principles of the atomic layer deposition (ALD) method are presented emphasizing the importance of precursor and surface chemistry. With a proper adjustment of the experimental conditions, i.e. temperatures and pulsing times, the growth proceeds via saturative steps. Selected recent ALD processes developed for films used in microelectronics are described as examples. These include depositio...

Cu-Zn-Sn-S Thin Films from Electrodeposited Metallic Precursor Layers

Cyclic voltammogram of ionic liquid and metallic-salts in ionic liquids were recorded. Cu/Sn/Zn stacked layers were electrodeposited and subsequently sulfurized in a tube furnace in elemental sulfur at 550oC. Thin films were characterized by X-ray diffraction, ICP-MS, and SEM. The device was characterized by I-V, QE and Mott-Schottky (capacitance-voltage) plot.