CVD Copper Deposition from CuI(HFAC)TMVS Studied Through a Modeling Experimental Design

Fluorinated aminoalkoxide Cu complexes: new CVD precursors for deposition of copper metal

Yun Chi,* Peng-Fu Hsu, Chao-Shiuan Liu,* Wei-Li Ching, Tsung-Yi Chou, Arthur J. Carty,* Shie-Ming Peng, Gene-Hsiang Lee and Shiow-Huey Chuang Department of Chemistry, National Tsing Hua University, Hsinchu 30013, Taiwan. E-mail: [email protected] Steacie Institute for Molecular Sciences, National Research Council Canada, 100 Sussex Drive, Ottawa, Ontario, Canada K1A 0R6 Department of Chemistr...

CVD of pure copper films from novel iso-ureate complexes.

We report the synthesis and characterisation of a new family of copper(i) metal precursors based around alkoxy-N,N'-di-alkyl-ureate ligands, and their subsequent application in the production of pure copper thin films. The molecular structure of the complexes bis-copper(i)(methoxy-N,N'-di-isopropylureate) (1) and bis-copper(i)(methoxy-N,N'-di-cyclohexylureate)(5) are described, as determined by...

Design issues in ionized metal physical vapor deposition of copper

The filling of deep vias and trenches with metal for interconnect layers in microelectronic devices requires anisotropic deposition techniques to avoid formation of voids. Ionized metal physical vapor deposition ~IMPVD! is a process which is being developed to address this need. In IMPVD, a magnetron sputter deposition source is augmented with a secondary plasma source with the goal of ionizing...

New Precursors for CVD Copper Metallization

Comparison of Deposition Models for a TEOS CVD Process

This paper focuses on the comparison of calibrated models for teos deposition in a cvd process according to sem images of SiO2 layers. We describe the applied models and the parameters which lead to the best results for each model. The simulations have been performed using our topography simulator elsa (Enhanced Level Set Applications) which follows the surface evolution by solving the level se...