Current noise in barrier photoconducting devices. II. Experiment
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چکیده
منابع مشابه
Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes
The electrical behaviour of Schottky barrier diodes realized on vertically standing individual GaN nanorods and array of nanorods is investigated. The Schottky diodes on individual nanorod show highest barrier height in comparison with large area diodes on nanorods array and epitaxial film which is in contrast with previously published work. The discrepancy between the electrical behaviour of n...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 1994
ISSN: 0163-1829,1095-3795
DOI: 10.1103/physrevb.49.7603