Cs/O co-adsorption on C-doped GaAs surface: From first-principles simulation to experiment

نویسندگان

چکیده

C-doped GaAs is considered a potential material for negative electron affinity photocathodes, where the p-type doped property beneficial to photoemission. To clarify stability and efficiency during Cs/O activation, gradient concentration of Cs adsorption co-adsorption models are established. The work function, energy, surface dipole moment intensified by first principles calculation based on density functional theory. Experimental results demonstrate that activation effectively enhances performance resulting in high levels quantum efficiency. Therefore, we conclude photocathodes have significantly improve photoelectric emission making them viable candidate future applications.

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ژورنال

عنوان ژورنال: AIP Advances

سال: 2023

ISSN: ['2158-3226']

DOI: https://doi.org/10.1063/5.0147752