CRYSTAL STRUCTURE OF AgGa2Te3I COMPOUND

A compound AgGa2Te3I belongs to the quaternary semiconductors of general formula AІВІІІ2X3Y (AІ – Cu, Ag; ВІІІ Ga, In; X S, Se, Те; Y - Cl, Br, I). For first time, its structure, which forms in tetragonal syngony, was studied by powder method, Sp.Gr. I-4, structural type CuIn2Te3Cl, with cell parameters: a = 6,0041 (4) Å, c 11,965 (1) Å. The synthesized evacuated quartz ampoules from simple substances and pre-synthesized AgI step heating. Based on melting temperatures components, 1070 K maximum synthesis temperature chosen, followed homogenizing annealing at 770 during 300 h subsequent quenching water room temperature. As result synthesis, compact, gray alloy obtained, resistant air. diffraction pattern powdered sample taken DRON 4-13 diffractometer, CuKα radiation, irradiation one point 15 sec. WinCSD program used calculate refined Rietveld method. obtained results structure were analyzed belonging defective discussed.