Crystal orientation dependence of deep level spectra in proton irradiated bulk ?-Ga₂O₃

The effects of 20 MeV proton irradiation with fluences 5 × 1014 and 1015 p/cm2 on electrical properties lightly Sn doped n-type (net donor concentration 3 1017 cm?3) bulk ?-Ga2O3 samples (010) (?201) orientation were studied. Proton decreases the net density a removal rate close to 200 cm?1 for both orientations similar electron rates in Si epilayers. main deep traps introduced crystals are near Ec?0.45 eV, while films, dominant centers so-called E2* (Ec?0.75 eV) E3 (Ec?0.1 traps. Deep acceptor spectra our –Ga2O3(Sn) dominated by well-known an optical ionization energy 2.3 often attributed split Ga vacancies. These acceptors present higher protons at orientation. Another important difference between two is introduction surface region (?0.1 ?m from surface) very high level Ec?0.27 not observed densities or epitaxial layers. presence these gives rise pronounced hysteresis low temperature forward current–voltage characteristics samples. results yet another indication significant impact their properties, this case, after irradiation.