Correction: CoPt/CeO2catalysts for the growth of narrow diameter semiconducting single-walled carbon nanotubes

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CoPt/CeO2 catalysts for the growth of narrow diameter semiconducting single-walled carbon nanotubes.

For the application of single-walled carbon nanotubes (SWNTs) in nanoelectronic devices, effective techniques for the growth of semiconducting SWNTs (s-SWNTs) with a specific diameter are still a great challenge. Herein, we report a facile strategy for the selective growth of narrow diameter distributed s-SWNTs using CoPt/CeO2 catalysts. The addition of Pt into a Co catalyst dramatically reduce...

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CoPt/CeO2 Catalysts for Growth of Narrow Diameter Semiconducting Single-walled Carbon Nanotubes

Please note that technical editing may introduce minor changes to the text and/or graphics, which may alter content. The journal’s standard Terms & Conditions and the Ethical guidelines still apply. In no event shall the Royal Society of Chemistry be held responsible for any errors or omissions in this Accepted Manuscript or any consequences arising from the use of any information it contains. ...

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Dispersion of single-walled carbon nanotubes of narrow diameter distribution.

The dispersibility and bundle defoliation of single-walled carbon nanotubes (SWNTs) of small diameter (<1 nm) have been evaluated on CoMoCAT samples with narrow distribution of diameters. As previously observed by photoluminescence and Raman spectroscopy, the CoMoCAT sample exhibits a uniquely narrow distribution of (n,m) structures that remains unchanged after different dispersion conditions. ...

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Selective growth of well-aligned semiconducting single-walled carbon nanotubes.

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Vertical array growth of small diameter single-walled carbon nanotubes.

A hot filament chemical vapor deposition method has been developed to grow vertical array single-walled carbon nanotubes (SWNTs). In this study, a hot filament (temperature greater than 2000 degrees C) was used to activate gas mixtures of hydrogen and carbon containing species at sub-atmospheric pressures. Silicon substrates decorated with islands of iron were directly inserted into a preheated...

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ژورنال

عنوان ژورنال: Nanoscale

سال: 2016

ISSN: 2040-3364,2040-3372

DOI: 10.1039/c5nr90226f