Copper-related defects in silicon: Electron-paramagnetic-resonance identification
نویسندگان
چکیده
منابع مشابه
Electron paramagnetic resonance study of defects in SiC
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where E0 is the energy level without any external magnetic field B = B0êz. Again, g denotes the g factor[5]. For induced transitions, the selection rule is ∆ms = ±1. For unpaired electrons, however, this selection rule is observed for all transitions, as S = 12 and, hence, ms ∈ {− 12 , 2}. The previous formulas are based on the assumption that the response of the material on the external magnet...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 1997
ISSN: 0163-1829,1095-3795
DOI: 10.1103/physrevb.56.4620