Coplanar Asymmetry Transformer Distributed Modeling for X-Band Drive Power Amplifier Design on GaN Process

In this paper, a methodology for designing distributed model coplanar asymmetry transformer on gallium nitride (GaN) process is proposed, which can accurately characterize the transformer’s feature up to millimeter-wave band. The paper analyses transformer-based matching circuit and proposes practical design procedure. A two stage, based X-band power amplifier (PA) reported here. Using proposed correlated procedure sharply reduce schematic period optimum time. PA chip designed 0.25 µm GaN technology occupies 1.515 mm2 area. At 28 V supply, gain output of reaches 15 dB 29 dBm respectively, wideband 47.6% bandwidth. To best our knowledge, MMIC in work first case among papers.