Coordination defects in amorphous silicon and hydrogenated amorphous silicon: a characterization from first-principles calculations

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First-principles study of hydrogenated amorphous silicon

K. Jarolimek,1,2 R. A. de Groot,2 G. A. de Wijs,2 and M. Zeman1 1DIMES, Delft University of Technology, Feldmannweg 17, 2600 GB Delft, The Netherlands 2Electronic Structure of Materials, Institute for Molecules and Materials, Faculty of Science, Radboud University Nijmegen, Heyendaalseweg 135, 6525 AJ Nijmegen, The Netherlands Received 23 May 2008; revised manuscript received 9 February 2009; p...

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Light-induced Defects in Thermal Annealed Hydrogenated Amorphous Silicon

The metastable defects of a-Si:H samples annealed at temperatures in the 300-550°C range have been studied by photothermal deflection spectroscopy (PDS). The light-soaked samples show an increase in optical absorption in the 0.8 to 1.5 eV range. The metastable defect density decreases when the annealing temperature increases, while the defect density increases. This decrease in the metastable d...

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Defects in Amorphous Semiconductors: Amorphous Silicon

Defects in disordered (amorphous) semiconductors are discussed, with an emphasis on hydrogenated amorphous silicon. The general differences between defect phenomena in crystalline and amorphous hosts are described, and the special importance of the electron–phonon coupling is stressed. Detailed calculations for amorphous Si are presented using accurate first principles (density-functional) tech...

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ژورنال

عنوان ژورنال: Philosophical Magazine B

سال: 2000

ISSN: 1364-2812,1463-6417

DOI: 10.1080/014186300255168