Contrast Analysis of Polarization in Three-Beam Interference Lithography
نویسندگان
چکیده
This paper analyzes the effect of polarization and incident angle on contrasts interference patterns in three-beam lithography. A non-coplanar laser system was set up to simulate relationship between contrast, beam polarization, angle. Different pattern periods require different angles, which means contrast losses Two modes were presented study effects with angles based theoretical analysis simulations. In case co-directional component TE mode, it demonstrated that decreases increase loss caused by error also grew rapidly. By changing mode azimuthal (TE-TE-TE) can be ensured remain above 0.97 even though is large. addition, TE-TE-TE accept larger errors. conclusion provides a basis for generation high-contrast light fields at applicable multi-beam
منابع مشابه
Contrast in four-beam-interference lithography.
Specific configurations of four linearly polarized, monochromatic plane waves have previously been shown to be capable of producing interference patterns exhibiting the symmetries inherent in all 14 Bravais lattices. We present (1) the range of possible absolute contrasts, (2) the conditions for unity absolute contrast, and (3) the types of interference patterns possible for configurations of f...
متن کاملThree-beam interference lithography methodology.
Three-beam interference lithography represents a technology capable of producing two-dimensional periodic structures for applications such as micro- and nanoelectronics, photonic crystal devices, metamaterial devices, biomedical structures, and subwavelength optical elements. In the present work, a systematic methodology for implementing optimized three-beam interference lithography is presente...
متن کاملBeam alignment for scanning beam interference lithography
By interfering two small diameter Gaussian laser beams, scanning beam interference lithography ~SBIL! is capable of patterning linear gratings and grids in resist while controlling their spatial phase distortions to the nanometer level. Our tool has a patterning area that is up to 300 mm in diameter. The motive for developing SBIL is to provide the semiconductor industry with a set of absolute ...
متن کاملThree-beam interference with circular polarization for structured illumination microscopy.
Three-dimensional structured illumination microscopy (3D-SIM) is a wide-field technique that can provide doubled resolution and improved image contrast. In this work, we demonstrate a simple approach to 3D-SIM - using three-beam interference with circular polarization to generate the pattern of structured illumination, so that the modulation contrast is routinely maintained at all orientations ...
متن کاملMicro- and submicrostructuring thin polymer films with two and three-beam single pulse laser interference lithography.
In this work we report the application of two and three-beam single pulse laser interference lithography to thin polymer films of poly(trimethylene terephthalate) (PTT). By irradiating the sample surface with temporary and spatially overlapped single pulses from two or three coherent beams and changing the angles of incidence, we have accomplished the fabrication of large-area polymer micro and...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Applied sciences
سال: 2021
ISSN: ['2076-3417']
DOI: https://doi.org/10.3390/app11114789