Continuous and symmetric trans-capacitance compact model for triple-gate junctionless MOSFETs

نویسندگان

چکیده

In this work, a continuous and symmetric trans-capacitance compact model for triple-gate junctionless MOSFETs is presented, valid in all regions of operation. Initially, the expressions gate, drain source total charges are analytically derived based on current already developed. Then, intrinsic capacitances calculated via differentiation terminal charges, verified against TCAD simulation data. The AC symmetry tests thoroughly investigated.

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ژورنال

عنوان ژورنال: Solid-state Electronics

سال: 2021

ISSN: ['0038-1101', '1879-2405']

DOI: https://doi.org/10.1016/j.sse.2020.107945