Conducted noise of GaN Schottky barrier diode in a DC–DC converter

Converter Using Silicon Carbide Schottky Diode

Silicon carbide (SiC) is the perfect cross between silicon and diamond. The crystal lattice of SiC is identical to silicon and diamond, but, exactly half the lattice sites are occupied by silicon atoms and half by carbon atoms. Like-diamond siC has electronic properties superior to silicon, but, unlike diamond it is also manufacturable. The thermal leakage current (dark current) in SiC is sixte...

Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes

The electrical behaviour of Schottky barrier diodes realized on vertically standing individual GaN nanorods and array of nanorods is investigated. The Schottky diodes on individual nanorod show highest barrier height in comparison with large area diodes on nanorods array and epitaxial film which is in contrast with previously published work. The discrepancy between the electrical behaviour of n...

Development of Diamond Schottky Barrier Diode

Diamond, which has excellent physical properties, is attractive for use in industrial applications. Because diamond is rated the highest for hardness and heat conductivity among all known materials, it is widely used for products such as abrasive grains, cutting tools, and heatsinks. Diamond also exhibits excellent transparency even in the ultraviolet range and can be applied to optical tools. ...

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Hydrogen sensors based on Pt-AlGaN/AlN/GaN schottky diode

Pt/AlGaN/AlN/GaN Schottky diodes have been fabricated and characterized for H2 sensing. Platinum (Pt) with a thickness of 20nm was evaporated on the sample to form the Schottky contact. The ohmic contact, formed by evaporated Ti/Al/Ni/Au metals, was subsequently annealed by a rapid thermal treatment at 860°C for 30 s in N2 ambience. Both the forward and reverse current of the device increased g...