Compound Semiconductors

Compound Semiconductors

Hydrogen in compound semiconductors

Hydrogen can be inadvertently introduced at any of several steps in the fabrication of optoelectronic devices. The most common consequence of hydrogenation is the passivation of dopant impurities, which leads to a decrease in the electrical conductivity of the material. The most successfully applied experimental technique for directly determining the involvement of hydrogen has been infrared-ab...

Technology Roadmaps for Compound Semiconductors

The roles cited for compound semiconductors in public versions of existing technology roadmaps from the National Electronics Manufacturing Initiative, Inc., Optoelectronics Industry Development Association, Microelectronics Advanced Research Initiative on Optoelectronic Interconnects, and Optoelectronics Industry and Technology Development Association (OITDA) are discussed and compared within t...

Gunn Effect in Compound Semiconductors

A theoretical and experimental study of the Gunn effect is presented. It appears that this effect, originally observed by Gunn as a time variation in the current through ohmic samples of n-GaAs when the sample voltage exceeded a critical value, can be accounted for by the transferred electron model of Ridley and Watkins. This model is based on a transfer of electrons from a low-mass, high-mobil...

Thermal Stability of Hg, -xMnxTe Compound Semiconductors

The thermal behaviour of Hg, -,Mn,Te single crystals is investigated by means of the RBS/channeling technique. The stoichiometry parameter x ranges from 0.08 to 0.2. An important release of Hg atoms is observed after annealing in hydrogen atmosphere at 240 "C for 10 min. Backscattering spectra for crystals with x = 0.2 revealed quite a sharp Hg edge proceeding towards greater depth with increas...