Competitive actions of MnSi in the epitaxial growth of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>Mn</mml:mi><mml:mn>5</mml:mn></mml:msub><mml:msub><mml:mi>Si</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math> thin films on Si(111)

Some magnetically ordered phases of the ${\mathrm{Mn}}_{5}{\mathrm{Si}}_{3}$ crystal are proving to be prototypes for study new fundamental spin physics related spontaneous breaking time-reversal symmetry despite a zero net magnetization. Here, we report on route grow epitaxial thin films Si(111). To this end, use Mn and Si codeposition in molecular beam epitaxy system carefully tune deposition rates, growth temperature, annealing temperature. We assessed silicide phase-formation morphology using reflection high-energy electron diffraction, x-ray high-resolution transmission microscopy (HRTEM) atomic force microscopy. Layers containing only could stabilized under very restrictive conditions, by tuning Mn/Si flux ratio match compound stoichiometry adjusting substrate temperature during 443 K. HRTEM imaging revealed existence an interfacial amorphous layer few nanometers thickness. Annealing heterostructure up 573 K led formation MnSi at vicinity ${\mathrm{Mn}}_{5}{\mathrm{Si}}_{3}$/Si(111) interface, which significantly reduced nucleation barrier ${\mathrm{Mn}}_{5}{\mathrm{Si}}_{3}$. High-quality crystalline were then formed with following relationships: ${\mathrm{Mn}}_{5}{\mathrm{Si}}_{3}$(0001)$[01\overline{1}0]//\mathrm{MnSi}(111)[\overline{2}11]//\mathrm{Si}(111)[1\overline{1}0]$. Our experiments showed that is enhanced above 473 or longer step, while quality overlayer correspondingly degraded leading textured films. The pathways structural properties manganese silicides can rationalized terms reactions maximizing free-energy lowering rate. Moreover, found magnetic magnetotransport used as efficient tool track both crystallinity proportion deposited layers.