Comparative energy bandgap analysis of zinc and tin based chalcogenide quantum dots

Semiconductors with wide bandgap are crucial for optoelectronic devices and energy applications owing to their electron confinement, high optical transparency tunable electrical conductivity. Therefore, in this study, the quantum confinement effect of chalcogenide semiconductor nanocrystals such as ZnS, ZnSe, ZnTe, SnS, SnSe SnTe studied based on Brus model using effective mass approximation, hyperbolic band cohesive model. The obtained results indicate that value differs from bulk crystals related effect. These verdicts confirm effects materials potential devices. Theoretical findings compared its valid experimental data.