Compact Modeling of Nonlinear Contact Effects in Short-Channel Coplanar and Staggered Organic Thin-Film Transistors

نویسندگان

چکیده

We present analytical physics-based compact models for the Schottky barriers at interfaces between organic semiconductor and source drain contacts in thin-film transistors (TFTs) fabricated coplanar staggered device architecture, we illustrate effect of these on current-voltage characteristics TFTs. The model barrier explicitly considers field-dependent lowering due to image charges. Potential solutions have been derived by applying Schwarz-Christoffel transformation, leading expressions electric field contact resistance contact. With regard barrier, a generic compact-modeling scheme based barrier-less TFT is introduced that can be applied any dc model. Finally, both are incorporated into an existing charge-based verified against results measurements performed TFTs with channel lengths ranging from 0.5 10.5 ?m.

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ژورنال

عنوان ژورنال: IEEE Transactions on Electron Devices

سال: 2021

ISSN: ['0018-9383', '1557-9646']

DOI: https://doi.org/10.1109/ted.2021.3088770