منابع مشابه
Noise Parameter Modeling of HEMTs and Nanometer-Scale CMOS Transistors
Closed-form expressions for the gateleakage resistance, Rp and its associated noise temperature, Tp, are presented. Tp represents the noise contribution caused by the gate-current Ig. Both Rp and Tp are expressed as functions of the measured noise parameters Rn, Fmin and Zopt. We present both frequency independent expressions and frequency dependent equations and discuss their accuracy. Unique ...
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ژورنال
عنوان ژورنال: IEEE Journal of the Electron Devices Society
سال: 2014
ISSN: 2168-6734
DOI: 10.1109/jeds.2014.2347991