Comment on ”Effects of Disorder on Ferromagnetism in Diluted Magnetic Semiconductors”
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چکیده
منابع مشابه
Effects of disorder on ferromagnetism in diluted magnetic semiconductors.
We present results of a numerical mean-field treatment of interacting spins and carriers in doped diluted magnetic semiconductors, which takes into account the positional disorder present in these alloy systems. Within our mean-field approximation, disorder enhances the ferromagnetic transition temperature for metallic densities not too far from the metal-insulator transition. Concurrently, the...
متن کاملComment on "Effects of disorder on ferromagnetism in diluted magnetic semiconductors".
electron energy relative to the valence band top for x 0:05, averaged over 100 configurations of 200 Mn impurities (dark gray area). The light gray bar denotes the GaAs gap. The dashed line shows the Fermi energy for p 0:1. Inset: Average Mn (positive) and hole (negative) spin polarizations for the same parameters. The dotted curves have been obtained with overlap matrix elements t r > 0 as in ...
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Carrier-induced ferromagnetism has been observed in several (III,Mn)V semiconductors. We review the theoretical picture of these ferromagnetic semiconductors that emerges from a model with kinetic-exchange coupling between localized Mn spins and valence-band carriers. We discuss the applicability of this model, the validity of a mean-field approximation for its interaction term widely used in t...
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Ferromagnetism is predicted in undoped diluted magnetic semiconductors illuminated by intense sub-band-gap laser radiation. The mechanism for photoinduced ferromagnetism is coherence between conduction and valence bands induced by the light which leads to an optical exchange interaction. The ferromagnetic critical temperature T(C) depends both on the properties of the material and on the freque...
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ژورنال
عنوان ژورنال: Physical Review Letters
سال: 2003
ISSN: 0031-9007,1079-7114
DOI: 10.1103/physrevlett.90.029701