Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers

Sub-Surface Damage Removal in Fabrication & Polishing of Silicon Carbide

Silicon Carbide (SiC) is emerging as a promising substrate for systems which leverage the low lattice mismatch with Gallium Nitride (GaN), high power density, heat dissipation and radiation hardness properties unique to this semiconductor. Wafer fabrication and polishing of SiC substrates poses processing issues as a result of the material’s high Mohs hardness (~9.25), and chemical inertness. P...

Four-point probe characterization of 4H silicon carbide

Stimulating Growth of Graphene Using Carbon Dioxide Laser Ablation on Silicon Carbide Wafers

This study intends to stimulate growth of graphene using carbon dioxide laser ablation in varying environments. Silicon carbide wafers will provide the medium for graphene production. Wafers will be ablated in three different environments: a near vacuum, at atmospheric pressure in the presence of argon gas, and at atmospheric pressure in the presence of helium, noting that all circumstances kee...

Contactless Characterization of Silicon Wafers

Contactless measurements are attractive and more commonly used because they do not contaminate the sample and generally do not require sample preparation. After an outline of the more common contactless characterization techniques, I will discuss a few of these in more detail. In particular resistivity or doping density profiling, minority carrier lifetime, stress, temperature, layer thickness,...

Terahertz imaging of silicon wafers

Silicon samples with and without implanted layers have been imaged with a standard time-domain terahertz ~THz! imaging system. The carrier concentration and mobility of the substrate have been extracted from the frequency dependence of the THz transmittance using a simple model based on the Drude approximation. The carrier concentration of implanted layers could be determined simply from the re...