Chemical Vapor Deposition of Ferrimagnetic Fe3O4 Thin Films

Ultrathin magnetic materials with room-temperature ferromagnetism/ferrimagnetism hold great potential in spintronic applications. In this work, we report the successful controllable growth of Fe3O4 thin films using a facile chemical vapor deposition method. Room-temperature ferrimagnetism was maintained as-grown down to 4 nm. Raman spectroscopy, X-ray diffraction and photoelectron spectroscopy analysis were conducted reveal structure quality film. Magnetization measurement showed ferrimagnetic hysteresis loops all films. A saturation magnetization 752 emu/cm3 observed for nm film, which higher than that bulk (480 emu/cm3). Additionally, Verwey transition at ~120 K visible This work provides an alternative method synthesizing ultrathin electronic, spintronic, memory device