Charged-Controlled Separation of Nitrogen from Natural Gas Using Boron Nitride Fullerene
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چکیده
منابع مشابه
Synthesis of Boron-Aluminum Nitride Thin Film by Chemical Vapour Deposition Using Gas Bubbler
Boron included aluminium nitride (B-AlN) thin films were synthesized on silicon (Si) substrates through chemical vapour deposition ( CVD ) at 773 K (500 °C). tert-buthylamine (tBuNH2) solution was used as nitrogen source and delivered through gas bubbler. B-AlN thin films were prepared on Si-100 substrates by varying gas mixture ratio of three precursors. The structural properties of the films ...
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ژورنال
عنوان ژورنال: The Journal of Physical Chemistry C
سال: 2014
ISSN: 1932-7447,1932-7455
DOI: 10.1021/jp510387h