Charge-based modeling of ultra narrow junctionless cylindrical nanowire FETs
نویسندگان
چکیده
This brief proposes an analytical approach to model the DC electrical behavior of extremely narrow cylindrical junctionless nanowire field-effect transistors (JL-NW-FETs). The includes explicit expressions, taking into account first-order perturbation theory for calculating eigenstates and corresponding wave-functions obtained by Schrödinger equation in cylindrical-coordinate. Assessment proposed with technology computer-aided design (TCAD) simulations measurement results confirms its validity all regions operation. represents essential step toward analysis circuits, mainly biosensors based on transistors.
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ژورنال
عنوان ژورنال: Solid-state Electronics
سال: 2021
ISSN: ['0038-1101', '1879-2405']
DOI: https://doi.org/10.1016/j.sse.2021.108153