Characterization techniques of ion bombardment damage on electronic devices during plasma processing—plasma process-induced damage
نویسندگان
چکیده
Abstract Plasma processing plays an important role in manufacturing leading-edge electronic devices such as ULSI circuits. Reactive ion etching achieves fine patterns with anisotropic features metal-oxide-semiconductor field-effect transistors (MOSFETs). In contrast, it has been pointed out over the last four decades that plasma processes not only modify surface morphology of materials but also degrade performance and reliability MOSFETs a result defect generation crystalline Si substrate dielectric films. This negative aspect is defined (process)-induced damage (PID) which categorized mainly into three mechanisms, i.e. physical, electrical, photon-irradiation interactions. article briefly discusses modeling PID provides historical overviews characterization techniques PID, particular, by physical interactions, bombardment damage.
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Article history: Received 25 June 2015 Received in revised form 30 June 2015 Accepted 1 July 2015 Available online xxxx
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ژورنال
عنوان ژورنال: Japanese Journal of Applied Physics
سال: 2021
ISSN: ['0021-4922', '1347-4065']
DOI: https://doi.org/10.35848/1347-4065/abe47c