Characterization of deep levels in n-type and semi-insulating 4H-SiC epitaxial layers by thermally stimulated current spectroscopy
نویسندگان
چکیده
منابع مشابه
Characterization of Deep Levels in n-type and Semi-Insulating 4H-SiC Epitaxial Layers by Thermally Stimulated Current Spectroscopy
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Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron
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Photoluminescence and Photoconductivity Dynamics in Semi-Insulating Epitaxial GaN Layers
The transients of fast free-carrier recombination and of multi-trapping processes due to different species of defects have been investigated by photoluminescence and by contact and microwave photoconductivity. Three distinct stages of relaxation, namely, of stimulated emission, of recombination due to point defects and capture into trapping centers associated with dislocations, and a non-expone...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2012
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.3675513