Certified ion implantation fluence by high accuracy RBS

Certified ion implantation fluence by high accuracy RBS.

From measurements over the last two years we have demonstrated that the charge collection system based on Faraday cups can robustly give near-1% absolute implantation fluence accuracy for our electrostatically scanned 200 kV Danfysik ion implanter, using four-point-probe mapping with a demonstrated accuracy of 2%, and accurate Rutherford backscattering spectrometry (RBS) of test implants from o...

Fluence, flux, and implantation temperature dependence of ion-implantation-induced defect production in 4H–SiC

Graphene synthesis by ion implantation.

We demonstrate an ion implantation method for large-scale synthesis of high quality graphene films with controllable thickness. Thermally annealing polycrystalline nickel substrates that have been ion implanted with carbon atoms results in the surface growth of graphene films whose average thickness is controlled by implantation dose. The graphene film quality, as probed with Raman and electric...

Limits of composition achievable by ion implantation

In high-dose ion implantation for materials modification, the maximum concentration of the implanted species is determined by ion-induced erosion (sputtering) of the implanted layer. In this review, we consider the influence of preferential sputtering and atomic mixing. The maximum concentration of the implanted species is given roughly by r IS and extends over a depth W where S is the sputteri...

Solid-phase epitaxial regrowth of amorphous layers in Si„100... created by low-energy, high-fluence phosphorus implantation

Medium energy ion scattering has been used to study the kinetics of solid-phase epitaxial regrowth SPEG of ultrathin amorphous layers formed by room-temperature implantation of 5 keV energy phosphorus ions into Si 100 . The implants create P distributions with peak concentrations up to 7 1021 cm−3. SPEG has been driven by rapid thermal annealing, 475 °C TA 600 °C, for times up to 2000 s. At eac...