Boron-Implanted Silicon Substrates for Physical Adsorption of DNA Origami
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چکیده
منابع مشابه
Interstitial charge states in boron-implanted silicon
It is becoming increasingly clear that simulation models of transient enhanced diffusion sTEDd in silicon need to incorporate interstitial charging effects accurately in order to adequately reproduce experimental data near the surface and near the underlying junction. However, in the case of boron TED, the relevant charge states and ionization levels of both boron and silicon interstitial atoms...
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Sandia National Laboratories, Albuquerque, New Mexico 871 85-1 056 PT"3 1 j 3 r 3 q a,,3 We show that Fe, Coy Cu, and Au impurities in Si are strongly gettered to boron-silicideprecipitates formed by supersaturation B implantation and annealing. Effective binding fr energies relative to interstitial solution range from somewhat above 1 to more than 2 eV. The B-Si precipitates formed at temperat...
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Transient enhanced diffusion of boron in preamorphized and subsequently regrown Si was studied by secondary ion mass spectrometry �SIMS� and transmission electron microscopy �TEM�. A comparison of 4 keV, 1� 1014/cm2 boron implants into crystalline and Ge preamorphized silicon was undertaken. Upon annealing the B implant into crystalline material exhibited the well-known transient enhanced diffu...
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DNA origami is a widely used method for fabrication of custom-shaped nanostructures. However, to utilize such structures, one needs to controllably position them on nanoscale. Here we demonstrate how different types of 3D scaffolded multilayer origamis can be accurately anchored to lithographically fabricated nanoelectrodes on a silicon dioxide substrate by DEP. Straight brick-like origami stru...
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Partially vertical aligned boron nitride nanotubes (BNNTs) on Si substrates are found to be superhydrophobic in contrast to boron nitride (BN) thin films. While the hexagonal-phase BN films are partially wetted by water with advancing contact angle of about 50 degrees , partially vertically aligned BNNTs can achieve superhydrophobic state with advancing water contact angle exceeding 150 degrees...
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ژورنال
عنوان ژورنال: International Journal of Molecular Sciences
سال: 2018
ISSN: 1422-0067
DOI: 10.3390/ijms19092513